- Patent Title: Integrated assemblies and methods of forming integrated assemblies
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Application No.: US16872598Application Date: 2020-05-12
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Publication No.: US11264275B2Publication Date: 2022-03-01
- Inventor: John D. Hopkins , Lifang Xu , Nancy M. Lomeli
- Applicant: Micron Technology, inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, inc.
- Current Assignee: Micron Technology, inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L27/11556 ; H01L27/11529 ; H01L27/1157 ; H01L27/11582 ; H01L27/11573 ; H01L23/522 ; H01L23/528 ; H01L23/535 ; H01L27/11524

Abstract:
Some embodiments include an integrated assembly having a stack of alternating first and second levels. The first levels contain conductive material and the second levels contain insulative material. At least some of the first and second levels are configured as steps. Each of the steps has one of the second levels over an associated one of the first levels. A layer is over the steps and is spaced from the stack by an intervening insulative region. Insulative material is over the layer. Conductive interconnects extend through the insulative material, through the layer, through the intervening insulative region and to the conductive material within the first levels of the steps. Some embodiments include methods of forming integrated assemblies.
Public/Granted literature
- US20210358805A1 Integrated Assemblies and Methods of Forming Integrated Assemblies Public/Granted day:2021-11-18
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