Invention Grant
- Patent Title: Etching method and substrate processing apparatus
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Application No.: US16704129Application Date: 2019-12-05
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Publication No.: US11264248B2Publication Date: 2022-03-01
- Inventor: Yoshimitsu Kon , Atsushi Uto , Lifu Li , Tomonori Miwa
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JPJP2018-229304 20181206,JPJP2019-183953 20191004
- Main IPC: H01L21/308
- IPC: H01L21/308 ; H01L21/3065 ; H01L21/67
Abstract:
A method of etching a substrate including an etching film and a mask formed on the etching film is provided. The mask includes a first pattern of a first recess having a first opening and a second pattern of a second recess having a second opening. The method includes etching the etching film to a predetermined depth; depositing a protective film on the mask after the etching; and etching the etching film after the depositing. The first opening is smaller than the second opening. As a result of the depositing, the first opening of the first pattern is clogged and the second opening of the second pattern is not clogged.
Public/Granted literature
- US20200185229A1 ETCHING METHOD AND SUBSTRATE PROCESSING APPARATUS Public/Granted day:2020-06-11
Information query
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