Invention Grant
- Patent Title: Semiconductor substrate, semiconductor element and method for producing semiconductor substrate
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Application No.: US16630087Application Date: 2018-07-09
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Publication No.: US11264241B2Publication Date: 2022-03-01
- Inventor: Akito Kuramata , Shinya Watanabe , Kohei Sasaki , Kuniaki Yagi , Naoki Hatta , Masataka Higashiwaki , Keita Konishi
- Applicant: TAMURA CORPORATION , SICOXS Corporation , National Institute of Information and Communications Technology
- Applicant Address: JP Tokyo; JP Tokyo; JP Tokyo
- Assignee: TAMURA CORPORATION,SICOXS Corporation,National Institute of Information and Communications Technology
- Current Assignee: TAMURA CORPORATION,SICOXS Corporation,National Institute of Information and Communications Technology
- Current Assignee Address: JP Tokyo; JP Tokyo; JP Tokyo
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Priority: JPJP2017-135017 20170710
- International Application: PCT/JP2018/025900 WO 20180709
- International Announcement: WO2019/013170 WO 20190117
- Main IPC: H01L21/18
- IPC: H01L21/18 ; H01L21/02 ; H01L21/78 ; H01L29/04 ; H01L29/16 ; H01L29/24 ; H01L29/267 ; H01L29/36 ; H01L29/78 ; H01L29/872
Abstract:
A semiconductor substrate includes a single crystal Ga2O3-based substrate and a polycrystalline substrate that are bonded to each other. A thickness of the single crystal Ga2O3-based substrate is smaller than a thickness of the polycrystalline substrate, and a fracture toughness value of the polycrystalline substrate is higher than a fracture toughness value of the single crystal Ga2O3-based substrate.
Public/Granted literature
- US20200168460A1 SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE Public/Granted day:2020-05-28
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