Invention Grant
- Patent Title: Substrate processing method
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Application No.: US16714218Application Date: 2019-12-13
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Publication No.: US11264236B2Publication Date: 2022-03-01
- Inventor: Toru Hisamatsu , Takayuki Katsunuma , Shinya Ishikawa , Yoshihide Kihara , Masanobu Honda
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Weihrouch IP
- Priority: JPJP2018-234699 20181214
- Main IPC: H01L21/02
- IPC: H01L21/02

Abstract:
A substrate processing method includes: providing a substrate having a pattern formed on a surface layer thereof; setting a temperature of the substrate such that a change in the pattern becomes a predetermined change amount; forming a reaction layer having a thickness corresponding to the temperature set in the setting on the surface layer of the substrate; and applying energy to the substrate formed with the reaction layer thereby removing the reaction layer from the surface layer of the substrate.
Information query
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