Invention Grant
- Patent Title: Data storage systems and methods for improved recovery after a write abort event
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Application No.: US16936303Application Date: 2020-07-22
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Publication No.: US11264104B2Publication Date: 2022-03-01
- Inventor: Mohsen Purahmad , Chao-Han Cheng , Dongxiang Liao , Bo Lei
- Applicant: Western Digital Technologies, Inc.
- Applicant Address: US CA San Jose
- Assignee: Western Digital Technologies, Inc.
- Current Assignee: Western Digital Technologies, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Morgan, Lewis & Bockius LLP
- Main IPC: G11C16/26
- IPC: G11C16/26 ; G11C16/34 ; G11C16/08 ; G11C16/10 ; G11C29/52 ; G11C16/14 ; G11C11/56 ; G11C16/04

Abstract:
Apparatus, media, methods, and systems for data storage systems and methods for improved recovery after a write abort event are described. A data storage system may comprise a non-volatile memory device, having one or more wordlines configured to receive a read level voltage, and a controller. The controller is configured to detect whether a write abort event occurred for the data storage system. The controller is configured to determine a first voltage offset based on one or more of a wear-level indication of the non-volatile memory device, or one or more voltage parameters of the non-volatile memory device. The controller is configured to determine, based on the first voltage offset, an adjusted read level voltage. The controller is configured to apply the adjusted read level voltage to a wordline of the non-volatile memory device. The controller is configured to read data, based on the applied adjusted read level voltage, from the wordline of the non-volatile memory device.
Public/Granted literature
- US20200350025A1 Data Storage Systems and Methods for Improved Recovery After a Write Abort Event Public/Granted day:2020-11-05
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