Invention Grant
- Patent Title: Method of controlling convection patterns of silicon melt and method of manufacturing silicon single crystal
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Application No.: US16976256Application Date: 2019-02-27
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Publication No.: US11261540B2Publication Date: 2022-03-01
- Inventor: Naoki Matsushima , Ryusuke Yokoyama , Hideki Sakamoto , Wataru Sugimura
- Applicant: SUMCO CORPORATION
- Applicant Address: JP Tokyo
- Assignee: SUMCO CORPORATION
- Current Assignee: SUMCO CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Greenblum & Bernstein, P.L.C.
- Priority: JPJP2018-035832 20180228
- International Application: PCT/JP2019/007441 WO 20190227
- International Announcement: WO2019/167986 WO 20190906
- Main IPC: C30B30/04
- IPC: C30B30/04 ; C30B15/10 ; C30B15/22 ; C30B15/30 ; C30B29/06
Abstract:
A method of controlling a convection pattern of a silicon melt includes applying a horizontal magnetic field having an intensity of 0.2 tesla or more to the silicon melt in a rotating quartz crucible to fix a direction of a convection flow in a plane orthogonal to an application direction of the horizontal magnetic field in the silicon melt, the horizontal magnetic field being applied so that a central magnetic field line passes through a point horizontally offset from a center axis of the quartz crucible by 10 mm or more.
Information query
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