Invention Grant
- Patent Title: Wide-bandgap semiconductor device including gate fingers between bond pads
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Application No.: US15979218Application Date: 2018-05-14
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Publication No.: US11245007B2Publication Date: 2022-02-08
- Inventor: Dethard Peters
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102017110536.0 20170515
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/10 ; H01L29/423 ; H01L29/45 ; H01L23/00 ; H01L29/417 ; H01L29/16 ; H01L29/49 ; H01L29/739 ; H01L29/78

Abstract:
A semiconductor device includes a semiconductor body of a wide-bandgap semiconductor material. A plurality of first bond areas is connected to a first load terminal of the semiconductor device. First gate fingers are arranged between the first bond areas. The first gate fingers extend in a first lateral direction and branch off from at least one of a first gate line portion and a second gate line portion. Second gate fingers extend in the first lateral direction. A first length of any of the first gate fingers along the first lateral direction is greater than a second length of any of the second gate fingers along the first lateral direction. A sum of the first length and the second length is equal to or greater than a lateral distance between the first gate line portion and the second gate line portion along the first lateral direction.
Public/Granted literature
- US20180331181A1 Wide-Bandgap Semiconductor Device Including Gate Fingers Between Bond Pads Public/Granted day:2018-11-15
Information query
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