Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16886457Application Date: 2020-05-28
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Publication No.: US11244922B2Publication Date: 2022-02-08
- Inventor: Takumi Shigemoto , Shohei Ogawa
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JPJP2019-143546 20190805
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/498 ; H01L23/04 ; H01L23/08

Abstract:
Provided is a semiconductor device stabilizing bond properties between an electrode terminal provided on a case and an internal wiring connected to a semiconductor element. A semiconductor device includes a base part, a semiconductor element, an electrode terminal, an insulating block, and an internal wiring. The semiconductor element is mounted on the base part. The electrode terminal is held by a case surrounding an outer periphery of the semiconductor element. An end portion of the electrode terminal protrudes toward an inner side of the case. The insulating block is provided on the base part between the semiconductor element and the case. In the internal wiring, one end portion is bonded to the end portion of the electrode terminal on the insulating block, and part of a region extending from the one end portion to the other end portion is bonded to the semiconductor element.
Public/Granted literature
- US20210043598A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-02-11
Information query
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