Invention Grant
- Patent Title: Method for making self-aligned post-cut SDB FinFET device
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Application No.: US17027126Application Date: 2020-09-21
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Publication No.: US11244865B1Publication Date: 2022-02-08
- Inventor: Yong Li
- Applicant: SHANGHAI HUALI INTEGRATED CIRCUIT CORPORATION
- Applicant Address: CN Shanghai
- Assignee: SHANGHAI HUALI INTEGRATED CIRCUIT CORPORATION
- Current Assignee: SHANGHAI HUALI INTEGRATED CIRCUIT CORPORATION
- Current Assignee Address: CN Shanghai
- Agency: Alston & Bird LLP
- Priority: CN202010729632.7 20200727
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L21/8234 ; H01L21/764 ; H01L21/3205 ; H01L21/3213 ; H01L21/3105
Abstract:
The disclosure includes forming a SiGe region on two adjacent fin structures and a SiP region on the fin structures adjacent to the SiGe region; forming SDB trenches; forming SiN plugs over the SDB trenches to make top-sealed hollow SDB trenches. The process for forming SDB trenches adds no additional cost, and the process is compatible with existing process flow. The SiN plugs are configured to seal the SDB trenches from top, such that the SDB trenches are filled with air and do not need to be thermally annealed. The advantage includes low fin loss in the annealing oxidation process and better controlled uniformity of the SDB trenches. Air in the SDB trenches reduces the parasitic capacitance of adjacent contacts, therefore and it is conducive to improving the device speed.
Public/Granted literature
- US20220028745A1 METHOD FOR MAKING SELF-ALIGNED POST-CUT SDB FINFET DEVICE Public/Granted day:2022-01-27
Information query
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