Embodiments of the present invention are directed to fabrication method and resulting structures for forming interconnects using a conductive spacer configured to prevent a short between a via and an adjacent line. In a non-limiting embodiment of the invention, a first conductive line and a second conductive line are formed in a metallization layer. A conductive spacer is formed on the first conductive line and a conductive via is formed on a surface of the conductive spacer. The conductive via is positioned such that the conductive spacer is between the first conductive line and the conductive via. A height of the conductive spacer is selected to provide a predetermined distance from the conductive via to the second conductive line. The predetermined distance from the conductive via to the second conductive line is sufficient to prevent a short between the conductive via and the second conductive line.