Invention Grant
- Patent Title: Semiconductor structure and manufacturing method thereof
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Application No.: US16203853Application Date: 2018-11-29
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Publication No.: US11244857B2Publication Date: 2022-02-08
- Inventor: Yung-Chih Tsai , Wei Che Hsu , Yu-Chung Yang , Alexander Kalnitsky
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/522 ; H01L23/532 ; H01L23/528 ; H01L23/535
Abstract:
A semiconductor structure includes a substrate, a gate structure disposed over the substrate, a dielectric material disposed over the substrate and the gate structure, a conductive structure extending within the dielectric material, and a void extending within the dielectric material and disposed over the gate structure.
Public/Granted literature
- US20190096742A1 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2019-03-28
Information query
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