Invention Grant
- Patent Title: Semiconductor device and method of forming the same
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Application No.: US16136265Application Date: 2018-09-20
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Publication No.: US11244829B2Publication Date: 2022-02-08
- Inventor: Feng-Yi Chang , Yu-Cheng Tung , Fu-Che Lee
- Applicant: UNITED MICROELECTRONICS CORP. , Fujian Jinhua Integrated Circuit Co., Ltd.
- Applicant Address: TW Hsin-Chu; CN Quanzhou
- Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee Address: TW Hsin-Chu; CN Quanzhou
- Agent Winston Hsu
- Priority: CN201810875849.1 20180803
- Main IPC: H01L21/308
- IPC: H01L21/308 ; H01L21/033 ; H01L27/108 ; H01L21/3213
Abstract:
A semiconductor device and a method of forming the same, the semiconductor includes a substrate and a material disposed on the substrate. The material layer includes plural first patterns arranged parallel and separately in an array within a first region of the substrate, and plural second patterns parallel and separately disposed at two opposite sides of the first patterns, and plural third patterns parallel and separately disposed at another two opposite sides of the first patterns, wherein each of the third patterns has a relative greater dimension than that of each of the first patterns.
Public/Granted literature
- US20200043733A1 SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME Public/Granted day:2020-02-06
Information query
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