Invention Grant
- Patent Title: Method for processing workpiece
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Application No.: US16898492Application Date: 2020-06-11
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Publication No.: US11244828B2Publication Date: 2022-02-08
- Inventor: Yoshihide Kihara , Toru Hisamatsu , Tomoyuki Oishi
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2016-065806 20160329,JP2016-147477 20160727
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/027 ; G03F1/80 ; G03F1/48 ; H01L21/02 ; H01L21/033 ; H01J37/32 ; H01L21/3213
Abstract:
According to an embodiment, a wafer (W) includes a layer (EL) to be etched, an organic film (OL), an antireflection film (AL), and a mask (MK1), and a method (MT) according to an embodiment includes a step of performing an etching process on the antireflection film (AL) by using the mask (MK1) with plasma generated in a processing container (12), in the processing container (12) of a plasma processing apparatus (10) in which the wafer (W) is accommodated, and the step includes steps ST3a to ST4 of conformally forming a protective film (SX) on the surface of the mask (MK1), and steps ST6a to ST7 of etching the antireflection film (AL) by removing the antireflection film (AL) for each atomic layer by using the mask (MK1) on which the protective film (SX) is formed.
Public/Granted literature
- US20200303181A1 METHOD FOR PROCESSING WORKPIECE Public/Granted day:2020-09-24
Information query
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