Invention Grant
- Patent Title: Ion milling device and ion source adjusting method for ion milling device
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Application No.: US16961759Application Date: 2018-02-28
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Publication No.: US11244802B2Publication Date: 2022-02-08
- Inventor: Hitoshi Kamoshida , Hisayuki Takasu , Atsushi Kamino , Toru Iwaya
- Applicant: Hitachi High-Tech Corporation
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Tech Corporation
- Current Assignee: Hitachi High-Tech Corporation
- Current Assignee Address: JP Tokyo
- Agency: Crowell & Moring LLP
- International Application: PCT/JP2018/007477 WO 20180228
- International Announcement: WO2019/167165 WO 20190906
- Main IPC: H01J37/08
- IPC: H01J37/08 ; H01J37/147 ; H01J37/20 ; H01J37/244 ; H01J37/305

Abstract:
By irradiating a sample with an unfocused ion beam, processing accuracy of an ion milling device for processing a sample or reproducibility accuracy of a shape of a processed surface is improved. Therefore, the ion milling device includes a sample chamber, an ion source position adjustment mechanism provided at the sample chamber, an ion source attached to the sample chamber via the ion source position adjustment mechanism and configured to emit an ion beam, and a sample stage configured to rotate around a rotation center. When a direction in which the rotation center extends when an ion beam center of the ion beam matches the rotation center is set as a Z direction, and a plane perpendicular to the Z direction is set as an XY plane, the ion source position adjustment mechanism is capable of adjusting a position of the ion source on the XY plane and a position of the ion source in the Z direction.
Public/Granted literature
- US20210066020A1 Ion Milling Device and Ion Source Adjusting Method for Ion Milling Device Public/Granted day:2021-03-04
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