Invention Grant
- Patent Title: Write operation techniques for memory systems
-
Application No.: US16700948Application Date: 2019-12-02
-
Publication No.: US11244717B2Publication Date: 2022-02-08
- Inventor: Zhongyuan Lu , Christina Papagianni , Hongmei Wang , Robert J. Gleixner
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Main IPC: G11C11/406
- IPC: G11C11/406 ; G11C11/409 ; G11C7/22 ; G11C11/56 ; G11C11/408

Abstract:
Methods, systems, and devices for write operation techniques for memory systems are described. In some memory systems, write operations performed on target memory cells of the memory device may disturb logic states stored by one or more adjacent memory cells. Such disturbances may cause reductions in read margins when accessing one or more memory cells, or may cause a loss of data in one or more memory cells. The described techniques may reduce aspects of logic state degradation by supporting operational modes where a host device, a memory device, or both, refrains from writing information to a region of a memory array, or inhibits write commands associated with write operations on a region of a memory array.
Public/Granted literature
- US20210166746A1 WRITE OPERATION TECHNIQUES FOR MEMORY SYSTEMS Public/Granted day:2021-06-03
Information query