Invention Grant
- Patent Title: Solid-state imaging element, method for manufacturing solid-state imaging element, and electronic apparatus
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Application No.: US16638861Application Date: 2018-05-21
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Publication No.: US11240450B2Publication Date: 2022-02-01
- Inventor: Yoshihiro Ando , Hideaki Togashi , Shinpei Fukuoka
- Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Applicant Address: JP Kanagawa
- Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee Address: JP Kanagawa
- Agency: Chip Law Group
- Priority: JPJP2017-159376 20170822
- International Application: PCT/JP2018/019519 WO 20180521
- International Announcement: WO2019/039010 WO 20190228
- Main IPC: H04N5/369
- IPC: H04N5/369 ; H04N5/232 ; H01L27/146 ; H04N9/04

Abstract:
Provided is a solid-state imaging element including a plurality of pixels that includes at least two phase difference detection pixels for focus detection. Each pixel has a stacked structure including a plurality of photoelectric conversion elements that are stacked on top of each other and absorb light beams different in wavelength from one another to generate electrical charges, and each phase difference detection pixel includes, in the stacked structure, a color filter that partially covers an upper face of one of the photoelectric conversion elements and absorbs a light beam with a specific wavelength.
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