Invention Grant
- Patent Title: Electronic semiconducting device and method for preparing the electronic semiconducting device
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Application No.: US16485808Application Date: 2018-02-20
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Publication No.: US11239440B2Publication Date: 2022-02-01
- Inventor: Ulrich Heggemann , Markus Hummert , Thomas Rosenow , Mauro Furno
- Applicant: Novaled GmbH
- Applicant Address: DE Dresden
- Assignee: Novaled GmbH
- Current Assignee: Novaled GmbH
- Current Assignee Address: DE Dresden
- Agency: Eversheds-Sutherland (US) LLP
- Priority: EP17156902 20170220,EP17156904 20170220,EP17156906 20170220
- International Application: PCT/EP2018/054154 WO 20180220
- International Announcement: WO2018/150048 WO 20180823
- Main IPC: H01L51/50
- IPC: H01L51/50 ; C07F3/02 ; C07F3/06 ; H01L27/32 ; H01L51/00 ; H01L51/56 ; C07F5/02 ; C09K11/06 ; H01L51/42

Abstract:
The present invention relates to an electronic device comprising between a first electrode and a second electrode at least one first hole transport layer, wherein the first hole transport layer comprises (i) at least one first hole transport matrix compound consisting of covalently bound atoms and (ii) at least one electrical p-dopant selected from metal sate and from electrically neutral metal complexes comprising a metal cation and a at least one anion and/or at least one anionic ligand consisting of at least 4 covalently bound atoms, wherein the metal cation of the electrical p-dopant is selected from alkali metals; alkaline earth metals, Pb, Me, Fe, Co, Ni, Zn, Cd; rare earth metals in oxidation state (II) or (III); Al, Ga, In; and from Sn, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W in oxidation state (TV) or less; provided that a) p-dopants comprising anion or anionic ligand having generic formula (Ia) or (Ib) wherein A1, A2, A3 and A4 are independently selected from CO, SO2 or POR1; R1=electron withdrawing group selected from the group comprising halide, nitrile, halogenated or perhalogenated C1 to C20 alkyl, halogenated or perhalogenated C6 to C20 aryl, or halogenated or perhalogenated heteroaryl with 5 to 20 ring-forming atoms; B1, B2, B3 and B4 are same or independently selected from substituted or unsubstituted C1 to C20 alkyl, substituted or unsubstituted C1 to C20 heteroalkyl, substituted or unsubstituted C6 to C20 aryl, substituted or unsubstituted C5 to C20 heteroaryl, or B1 and B2 form a ring; and b) p-dopants consisting of Li cation and an anion selected from perchlorate and tetrafluoroborate are excluded, and the first hole transport layer comprises a sublayer, wherein the electrical dopant is comprised in an amount, by weight and/or by volume, exceeding the total amount of other components which may additionally be comprised in the sublayer, and a method for preparing the same.
Public/Granted literature
- US20200052209A1 Electronic Semiconducting Device and Method for Preparing the Electronic Semiconducting Device Public/Granted day:2020-02-13
Information query
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