Invention Grant
- Patent Title: Magnetic device and magnetic random access memory
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Application No.: US16426589Application Date: 2019-05-30
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Publication No.: US11239413B2Publication Date: 2022-02-01
- Inventor: Shy-Jay Lin , Mingyuan Song
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L43/04
- IPC: H01L43/04 ; H01L27/22 ; H01L43/14 ; H01L43/10 ; H01L43/06

Abstract:
A spin-orbit-torque (SOT) magnetic device includes a bottom metal layer, a first magnetic layer, as a magnetic free layer, disposed over the bottom metal layer, a spacer layer disposed over the first magnetic layer, and a second magnetic layer disposed over the spacer layer. The first magnetic layer includes a lower magnetic layer, a middle layer made of non-magnetic layer and an upper magnetic layer.
Information query
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