Invention Grant
- Patent Title: Semiconductor light-emitting device
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Application No.: US16933756Application Date: 2020-07-20
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Publication No.: US11239401B2Publication Date: 2022-02-01
- Inventor: Tomoichiro Toyama , Hideaki Anzai , Kenya Hashimoto , Ryo Yatagai
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: JPJP2017-241495 20171218,JPJP2017-241805 20171218,JPJP2018-214743 20181115
- Main IPC: H01L33/62
- IPC: H01L33/62 ; H01L33/48 ; H01L33/24

Abstract:
A semiconductor light-emitting device includes a substrate having a base, a conductive layer and an insulating layer, a semiconductor light-emitting element and a resin member. The base has a pair of base first side surfaces and a pair of base third side surfaces. The conductive layer includes a front-surface segment and a side-surface segment. The front surface segment includes a front-surface first part. The insulating layer includes an insulating-layer first part and an insulating-layer second part. The resin member covers the insulating-layer first part and the insulating-layer second part of the insulating layer. A first thickness of the insulating-layer first part is greater than a second thickness of the insulating-layer second part.
Public/Granted literature
- US20200350478A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE Public/Granted day:2020-11-05
Information query
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