Invention Grant
- Patent Title: Semiconductor device and method
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Application No.: US16805958Application Date: 2020-03-02
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Publication No.: US11239368B2Publication Date: 2022-02-01
- Inventor: Martin Christopher Holland , Blandine Duriez , Marcus Johannes Henricus van Dal , Yasutoshi Okuno
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/775
- IPC: H01L29/775 ; H01L29/36 ; H01L21/768 ; H01L29/78 ; H01L29/267 ; H01L21/8234 ; H01L29/66 ; H01L29/417
Abstract:
In an embodiment, a device includes: a semiconductor substrate having a channel region; a gate stack over the channel region; and an epitaxial source/drain region adjacent the gate stack, the epitaxial source/drain region including: a main portion in the semiconductor substrate, the main portion including a semiconductor material doped with gallium, a first concentration of gallium in the main portion being less than the solid solubility of gallium in the semiconductor material; and a finishing portion over the main portion, the finishing portion doped with gallium, a second concentration of gallium in the finishing portion being greater than the solid solubility of gallium in the semiconductor material.
Public/Granted literature
- US20210066499A1 Semiconductor Device and Method Public/Granted day:2021-03-04
Information query
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