- Patent Title: Fabricating a gate-all-around (GAA) field effect transistor having threshold voltage asymmetry by thinning source side lateral end portion of the nanosheet layer
-
Application No.: US16147680Application Date: 2018-09-29
-
Publication No.: US11239359B2Publication Date: 2022-02-01
- Inventor: Jingyun Zhang , Choonghyun Lee , Takashi Ando , Pouya Hashemi , Alexander Reznicek
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Otterstedt, Wallace & Kammer, LLP
- Agent Jeffrey S LaBaw
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/10 ; H01L29/161 ; H01L29/08 ; H01L29/06 ; H01L29/786 ; H01L29/423
Abstract:
Channel engineering is employed to obtain a gate-all-around field-effect transistor having an asymmetric threshold voltage. A dual channel profile enables a steep potential distribution near the source side that enhances the lateral channel electric field and thus increases the carrier mobility.
Information query
IPC分类:
