Method for making a transistor, comprising: making, on a substrate, a gate surrounded by a dielectric material; depositing a stop layer on the gate and the dielectric material; etching the stop layer in accordance with an active region pattern, forming a channel location located on the gate; etching the dielectric material located in the active region pattern, forming source and drain locations; depositing a semimetal material in the channel, source and drain locations; planarizing the semimetal material; crystallizing the semimetal material, forming the channel and the source and drain; and wherein the semimetal material of the channel is semiconductive and the semimetal material of the source and drain is electrically conductive.