Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US16716151Application Date: 2019-12-16
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Publication No.: US11239089B2Publication Date: 2022-02-01
- Inventor: Meng-Han Lin , Chih-Ren Hsieh , Chih-Pin Huang , Ching-Wen Chan
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L21/3105
- IPC: H01L21/3105 ; H01L27/11521 ; H01L21/308 ; H01L21/762
Abstract:
A method for manufacturing a semiconductor device is provided. The method includes forming a first isolation feature in a peripheral region of a substrate; recessing the cell region of the substrate after forming the first isolation feature; forming a second isolation feature in a cell region of the substrate after recessing the cell region of the substrate; forming a plurality of control gates over the cell region of the substrate; and forming a gate stack over the peripheral region of the substrate.
Public/Granted literature
- US20210183659A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2021-06-17
Information query
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