Invention Grant
- Patent Title: Read-write circuit and read-write method of memristor
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Application No.: US17049024Application Date: 2019-11-12
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Publication No.: US11238928B2Publication Date: 2022-02-01
- Inventor: Xingsheng Wang , Enming Huang , Xiangshui Miao
- Applicant: Huazhong University of Science and Technology
- Applicant Address: CN Hubei
- Assignee: Huazhong University of Science and Technology
- Current Assignee: Huazhong University of Science and Technology
- Current Assignee Address: CN Hubei
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: CN201910877351.3 20190917
- International Application: PCT/CN2019/117419 WO 20191112
- International Announcement: WO2021/051548 WO 20210325
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00 ; G11C7/06

Abstract:
A read-write circuit mainly includes a read circuit and a write circuit. The write circuit comprises: a first voltage selector and a first voltage follower circuit that is electrically connected to the memristor storage array. The read-write circuit further includes a second voltage selector and a second voltage follower circuit that is electrically connected to the memristor storage array. Voltage stable following during bipolar writing is selected through the foregoing selector. Meanwhile, the reading circuit is provided with a variable resistor to select an access mode. The actual read-out voltage and the output voltage passing through the reference resistor under the same read voltage are input into a differential amplifier to obtain read-out data.
Public/Granted literature
- US20210407589A1 READ-WRITE CIRCUIT AND READ-WRITE METHOD OF MEMRISTOR Public/Granted day:2021-12-30
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