Invention Grant
- Patent Title: Pixel structure and manufacturing method thereof, array substrate and display device
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Application No.: US15769640Application Date: 2017-08-07
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Publication No.: US11237440B2Publication Date: 2022-02-01
- Inventor: Duolong Ding , Huafeng Liu , Shengwei Zhao , Chaochao Sun , Chao Wang , Jingping Lv , Meng Yang , Lei Yang , Chongliang Hu , Lin Xie , Bule Shun , Shimin Sun
- Applicant: BOE TECHNOLOGY GROUP CO., LTD. , ORDOS YUANSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Applicant Address: CN Beijing; CN Inner Mongolia
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.,ORDOS YUANSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.,ORDOS YUANSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Beijing; CN Inner Mongolia
- Priority: CN201710005218.X 20170104
- International Application: PCT/CN2017/096203 WO 20170807
- International Announcement: WO2018/126676 WO 20180712
- Main IPC: G02F1/1362
- IPC: G02F1/1362

Abstract:
A pixel structure and a manufacturing method thereof, an array substrate and a display device are provided. The pixel structure includes: a signal line; a common electrode line an extension direction of which is same as an extension direction of the signal line; a transistor including a semiconductor layer which includes a source region and a drain region; a first storage electrode which is insulated from the common electrode line and is connected with the drain region of the semiconductor layer; and a second storage electrode which is connected with the common electrode line and is insulated from the first storage electrode. In the pixel structure, portions, between the signal line and the common electrode line, of the first storage electrode and the second storage electrode includes overlap with each other to form a first storage capacitance.
Public/Granted literature
- US20200241369A1 PIXEL STRUCTURE AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY DEVICE Public/Granted day:2020-07-30
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