Invention Grant
- Patent Title: Test array structure, wafer structure and wafer testing method
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Application No.: US16868520Application Date: 2020-05-06
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Publication No.: US11237205B2Publication Date: 2022-02-01
- Inventor: Tsang-Po Yang , Jui-Hsiu Jao
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW New Taipei
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW New Taipei
- Agency: CKC & Partners Co., LLC
- Main IPC: G01R31/28
- IPC: G01R31/28

Abstract:
A test array structure includes a substrate, first and second cells, first and second bit-line rings and four word-lines. Each of the first and second cells has a first drain region, a first gate region, a source region, a second gate region and a second drain region connected together in sequence. The first drain region and the first gate region of the first cell are located within the first bit-line ring. The second drain region and the second gate region of the first cell are located between the first and second bit-line rings. The first drain region and the first gate region of the second cell is located within the second bit-line ring. The second drain region of the first cell and the first drain region of the second cell are located between the two immediately-adjacent word-lines.
Public/Granted literature
- US20210349145A1 TEST ARRAY STRUCTURE, WAFER STRUCTURE AND WAFER TESTING METHOD Public/Granted day:2021-11-11
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