Invention Grant
- Patent Title: Power efficient voltage level translator circuit
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Application No.: US15087812Application Date: 2016-03-31
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Publication No.: US11223359B2Publication Date: 2022-01-11
- Inventor: Rahul Krishnakumar Nadkarni , Anthony Correale, Jr.
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: G06F1/3296
- IPC: G06F1/3296 ; H03K19/0185 ; H03K3/356 ; H03K3/012 ; H03K19/00 ; H03K19/017

Abstract:
Disclosed systems and methods relate to a power efficient voltage level translator. In a normal mode wherein a first supply voltage of the first voltage domain and a second supply voltage of the second voltage domain are different, the voltage level translator translates an input signal in a first voltage domain to an output signal in a second voltage domain. In a bypass mode wherein the first supply voltage and the second supply voltage are substantially the same, a bypass circuit is configured to bypass the voltage level translator and provide the input signal as the output signal in the first voltage domain, thus avoiding delay introduced by the voltage level translator in the bypass mode. Further, a power-down circuit is configured to power-down the voltage level translator in the bypass mode but not in the normal mode.
Public/Granted literature
- US20170288673A1 POWER EFFICIENT VOLTAGE LEVEL TRANSLATOR CIRCUIT Public/Granted day:2017-10-05
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