Invention Grant
- Patent Title: Semiconductor light emitting device and method of manufacturing semiconductor light emitting device
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Application No.: US16727465Application Date: 2019-12-26
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Publication No.: US11222995B2Publication Date: 2022-01-11
- Inventor: Noritaka Niwa , Tetsuhiko Inazu , Yasumasa Suzaki , Akifumi Nawata , Satoru Tanaka
- Applicant: NIKKISO CO., LTD. , SCIVAX Corporation
- Applicant Address: JP Tokyo; JP Kawasaki Kanagawa
- Assignee: NIKKISO CO., LTD.,SCIVAX Corporation
- Current Assignee: NIKKISO CO., LTD.,SCIVAX Corporation
- Current Assignee Address: JP Tokyo; JP Kawasaki Kanagawa
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L33/22
- IPC: H01L33/22 ; H01L33/00 ; H01L33/12 ; H01L33/32 ; H01L33/06 ; H01L33/14 ; H01L33/40
Abstract:
A semiconductor light emitting device includes a light extraction layer having a light extraction surface. Multiple cone-shaped parts formed in an array are provided on the light extraction surface. The cone-shaped part has a first portion having a first angle of inclination of a side surface and a second portion having a second angle of inclination of a side surface smaller than the first angle. The second portion is closer to an apex of the cone-shaped part than the first portion and has a larger height than the first portion.
Information query
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