Invention Grant
- Patent Title: Solid-state imaging device
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Application No.: US16803787Application Date: 2020-02-27
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Publication No.: US11222916B2Publication Date: 2022-01-11
- Inventor: Kenji Kobayashi , Toshifumi Wakano , Yusuke Otake
- Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Applicant Address: JP Kanagawa
- Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee Address: JP Kanagawa
- Agency: Sheridan Ross P.C.
- Priority: JP2017-151980 20170804
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L23/522 ; H01L31/107

Abstract:
An imaging device includes a first chip. The first chip includes a first pixel and a second pixel. The first pixel includes a first anode region and a first cathode region, and the second pixel includes a second anode region and a second cathode region. The first chip includes a first wiring layer. The first wiring layer includes a first anode electrode, a first anode via coupled to the first anode electrode and the first anode region, and a second anode via coupled to the first anode electrode and the second anode region.
Information query
IPC分类: