Invention Grant
- Patent Title: Semiconductor memory device
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Application No.: US16529979Application Date: 2019-08-02
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Publication No.: US11222902B2Publication Date: 2022-01-11
- Inventor: Manabu Sakamoto , Kenji Tashiro , Takamasa Ito
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Minato-ku
- Assignee: Toshiba Memory Corporation
- Current Assignee: Toshiba Memory Corporation
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JPJP2019-048283 20190315
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L27/11524 ; G11C5/06 ; H01L27/1157 ; H01L27/11556
Abstract:
A semiconductor memory device according to an embodiment includes a substrate, first and second conductive layers, first and second pillars, and a first member. The first conductive layer includes a first portion, a second portion, and a third portion above the second portion. The second conductive layers are stacked above the first conductive layer. The first pillar includes a first semiconductor layer in contact with the first portion in a direction crossing the stacked direction. The second pillar is provided to penetrate the second conductive layers and the third portion in the stacked direction. The first member is provided between the first and second pillars and between the second and third portions.
Public/Granted literature
- US20200295033A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2020-09-17
Information query
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