Invention Grant
- Patent Title: Integrated power semiconductor device and method for manufacturing the same
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Application No.: US16839089Application Date: 2020-04-03
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Publication No.: US11222890B2Publication Date: 2022-01-11
- Inventor: Ming Qiao , Linrong He , Yi Li , Chunlan Lai , Bo Zhang
- Applicant: University of Electronic Science and Technology of China
- Applicant Address: CN Chengdu
- Assignee: University of Electronic Science and Technology of China
- Current Assignee: University of Electronic Science and Technology of China
- Current Assignee Address: CN Chengdu
- Agency: Bayramoglu Law Offices LLC
- Priority: CN201910845004.2 20190907
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L27/092 ; H01L29/66 ; H01L21/762 ; H01L21/8238 ; H01L29/06 ; H01L29/739 ; H01L29/78
Abstract:
An integrated power semiconductor device, includes devices integrated on a single chip. The devices include a vertical high voltage device, a first high voltage pLDMOS device, a high voltage nLDMOS device, a second high voltage pLDMOS device, a low voltage NMOS device, a low voltage PMOS device, a low voltage NPN device, and a low voltage diode device. A dielectric isolation is applied to the first high voltage pLDMOS device, the high voltage nLDMOS device, the second high voltage pLDMOS device, the low voltage NMOS device, the low voltage PMOS device, the low voltage NPN device, and the low voltage diode device. A multi-channel design is applied to the first high voltage pLDMOS device, and the high voltage nLDMOS device. A single channel design is applied to the second high voltage pLDMOS device.
Public/Granted literature
- US20210074699A1 INTEGRATED POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2021-03-11
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