Invention Grant
- Patent Title: Semiconductor device with multi-layer metallization
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Application No.: US16008094Application Date: 2018-06-14
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Publication No.: US11222812B2Publication Date: 2022-01-11
- Inventor: Matthias Stecher
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Viering, Jentschura & Partners MBB
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/288 ; H01L21/3205 ; H01L21/02 ; H01L23/532 ; H01L23/528 ; H01L23/522
Abstract:
One or more embodiments are related to a semiconductor device, comprising: a metallization layer comprising a plurality of portions, each of the portions having a different thickness. The metallization layer may be a final metal layer.
Public/Granted literature
- US20180301414A1 SEMICONDUCTOR DEVICE WITH MULTI-LAYER METALLIZATION Public/Granted day:2018-10-18
Information query
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