Invention Grant
- Patent Title: Foam in ion implantation system
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Application No.: US16551042Application Date: 2019-08-26
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Publication No.: US11222768B2Publication Date: 2022-01-11
- Inventor: James Alan Pixley , Eric D. Hermanson , Philip Layne , Lyudmila Stone , Thomas Stacy
- Applicant: Varian Semiconductor Equipment Associates, Inc.
- Applicant Address: US MA Gloucester
- Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee Address: US MA Gloucester
- Agency: Kacvinsky Daisak Bluni PLLC
- Main IPC: H01J37/317
- IPC: H01J37/317 ; H01L21/768 ; H01L21/02 ; H01J37/32
Abstract:
Disclosed is a semiconductor processing apparatus including one or more components having a conductive or nonconductive porous material. In some embodiments, an ion implanter may include a plurality of beam line components for directing an ion beam to a target, and a porous material along a surface of at least one of the plurality of beamline components.
Public/Granted literature
- US20200083021A1 FOAM IN ION IMPLANTATION SYSTEM Public/Granted day:2020-03-12
Information query
