Invention Grant
- Patent Title: Packaged integrated circuit having a photodiode and a resistive memory
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Application No.: US16573075Application Date: 2019-09-17
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Publication No.: US11222679B2Publication Date: 2022-01-11
- Inventor: Nihaar N. Mahatme , Mehul D. Shroff
- Applicant: NXP USA, Inc.
- Applicant Address: US TX Austin
- Assignee: NXP USA, Inc.
- Current Assignee: NXP USA, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: G11C11/16
- IPC: G11C11/16 ; H01L31/0203 ; H01L43/02 ; H01L43/08 ; G11C5/14 ; H01L27/22

Abstract:
A packaged integrated circuit includes a photodiode and a memory. The photodiode generates energy when radiation strikes a surface of the photodiode. The memory includes a plurality of non-volatile memory cells and memory control circuitry. The memory control circuitry is configured to perform an operation to change values stored in at least some of the memory cells of the plurality of non-volatile memory cells while being powered by energy generated by the photodiode. An encapsulant at least partially encapsulates the photodiode and the memory, in which the encapsulant blocks radiation from reaching the surface of the photodiode.
Public/Granted literature
- US20210082488A1 PACKAGED INTEGRATED CIRCUIT HAVING A PHOTODIODE AND A RESISTIVE MEMORY Public/Granted day:2021-03-18
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