- Patent Title: Narrow etched gaps or features in multi-period thin-film structures
-
Application No.: US16947172Application Date: 2020-07-21
-
Publication No.: US11222676B2Publication Date: 2022-01-11
- Inventor: Edward Wuori
- Applicant: Integrated Magnetoelectronics Corp.
- Applicant Address: US CA Berkeley
- Assignee: Integrated Magnetoelectronics Corp.
- Current Assignee: Integrated Magnetoelectronics Corp.
- Current Assignee Address: US CA Berkeley
- Agency: Weaver Austin Villeneuve & Sampson LLP
- Main IPC: G11B5/39
- IPC: G11B5/39 ; G11C11/16 ; H01L43/02 ; H01L27/22 ; H01F10/32 ; H01L43/08 ; H01L43/12
Abstract:
Multi-period thin-film structures exhibiting giant magnetoresistance (GMR) are described. Techniques are also described by which narrow spacing and/or feature size may be achieved for such structures and other thin-film structures having an arbitrary number of periods.
Public/Granted literature
- US20200349992A1 NARROW ETCHED GAPS OR FEATURES IN MULTI-PERIOD THIN-FILM STRUCTURES Public/Granted day:2020-11-05
Information query
IPC分类:
