Invention Grant
- Patent Title: Memory device and memory system including the same
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Application No.: US17156813Application Date: 2021-01-25
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Publication No.: US11218343B2Publication Date: 2022-01-04
- Inventor: Jaewoo Park , Youngdon Choi , Junghwan Choi , Changsik Yoo
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Lee IP Law, PC
- Priority: KR10-2020-0066716 20200602
- Main IPC: H04L25/02
- IPC: H04L25/02 ; H04L25/14 ; H04L25/49

Abstract:
Provided are a memory device and a memory system including the same. The memory device may include a data bus inversion (DBI) mode selector configured to select a first multi-bit DBI signal from among a plurality of multi-bit DBI signals respectively corresponding to a plurality of DBI modes according to multi-bit data; a multi-mode DBI encoder configured to generate encoded multi-bit data by DBI encoding the multi-bit data according to the first multi-bit DBI signal; and a transceiver configured to transmit a data symbol corresponding to the encoded multi-bit data through a data channel and transmit a DBI symbol corresponding to the first multi-bit DBI signal through a DBI channel.
Public/Granted literature
- US20210377080A1 MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME Public/Granted day:2021-12-02
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