Invention Grant
- Patent Title: Magnetoresistive memory device and method for manufacturing magnetoresistive memory device
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Application No.: US16352393Application Date: 2019-03-13
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Publication No.: US11217745B2Publication Date: 2022-01-04
- Inventor: Yuichi Ito , Kouji Matsuo
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz & Volek PC
- Priority: JPJP2018-166841 20180906
- Main IPC: H01L43/12
- IPC: H01L43/12 ; H01L43/02 ; H01L27/22 ; G11C11/16 ; H01L43/10
Abstract:
According to one embodiment, a method for manufacturing a magnetoresistive memory device includes forming a first layer stack on a substrate. A second layer stack including a first ferromagnet is formed on the first layer stack. A mask including a first portion and an opening is formed above the second layer stack. The second layer stack is etched with an ion beam that travels through the opening. The first layer stack is etched by reactive ion etching through the opening.
Public/Granted literature
- US20200083443A1 MAGNETORESISTIVE MEMORY DEVICE AND METHOD FOR MANUFACTURING MAGNETORESISTIVE MEMORY DEVICE Public/Granted day:2020-03-12
Information query
IPC分类:
