Invention Grant
- Patent Title: High-voltage semiconductor devices having buried layer overlapped with source and well regions
-
Application No.: US16527452Application Date: 2019-07-31
-
Publication No.: US11217691B2Publication Date: 2022-01-04
- Inventor: Vivek Ningaraju , Po-An Chen
- Applicant: Nuvoton Technology Corporation
- Applicant Address: TW Hsinchu Science Park
- Assignee: Nuvoton Technology Corporation
- Current Assignee: Nuvoton Technology Corporation
- Current Assignee Address: TW Hsinchu Science Park
- Agency: Muncy, Geissler, Olds and Lowe, P.C.
- Priority: TW107139477 20181107
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06 ; H01L29/08 ; H01L29/10
Abstract:
A high-voltage semiconductor device includes a semiconductor substrate having a first conductivity type. A first well region is disposed on the semiconductor substrate and has the first conductivity type. A second well region is adjacent to the first well region and has a second conductivity type opposite to the first conductivity type. A first source region and a first drain region is respectively disposed in the first well region and the second well region, wherein the first source region and the first drain region has the second conductivity type. A first gate structure is disposed on the first well region and the second well region, and a buried layer is disposed in the semiconductor substrate and has the first conductivity type, wherein the buried layer is overlapped with the first well region and the second well region, and the buried layer is directly below the first source region.
Information query
IPC分类:
