Invention Grant
- Patent Title: Trench with different transverse cross-sectional widths
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Application No.: US16836344Application Date: 2020-03-31
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Publication No.: US11217675B2Publication Date: 2022-01-04
- Inventor: Saumitra Raj Mehrotra , Bernhard Grote , Ljubo Radic
- Applicant: NXP USA, INC.
- Applicant Address: US TX Austin
- Assignee: NXP USA, INC.
- Current Assignee: NXP USA, INC.
- Current Assignee Address: US TX Austin
- Agent David G. Dolezal
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/423 ; H01L29/66 ; H01L29/40
Abstract:
A semiconductor device includes a trench in a semiconductor material having a device section and a termination section. A gate structure is located in the trench. With some embodiments, the transverse cross-sectional width of the termination section is wider than the transverse cross-sectional width of the device section.
Public/Granted literature
- US20210305385A1 TRENCH WITH DIFFERENT TRANSVERSE CROSS-SECTIONAL WIDTHS Public/Granted day:2021-09-30
Information query
IPC分类:
