Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US16877497Application Date: 2020-05-19
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Publication No.: US11217629B2Publication Date: 2022-01-04
- Inventor: Meng-Han Lin , Sai-Hooi Yeong , Yu-Ming Lin , Han-Jong Chia , Chenchen Jacob Wang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: H01L27/24
- IPC: H01L27/24 ; H01L29/423 ; H01L29/66 ; H01L29/786 ; H01L45/00
Abstract:
A semiconductor device includes a transistor and a memory device. The transistor includes a gate stack and a nanosheet penetrating through the gate stack. The memory device has a first portion and a second portion. A first portion of the gate stack is sandwiched between the first portion and the second portion of the memory device.
Public/Granted literature
- US20210366985A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2021-11-25
Information query
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