Invention Grant
- Patent Title: Dual tunnel magnetoresistance (TMR) element structure
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Application No.: US16684932Application Date: 2019-11-15
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Publication No.: US11217626B2Publication Date: 2022-01-04
- Inventor: Paolo Campiglio , Amal Hamdache
- Applicant: Allegro MicroSystems, LLC
- Applicant Address: US NH Manchester
- Assignee: Allegro MicroSystems, LLC
- Current Assignee: Allegro MicroSystems, LLC
- Current Assignee Address: US NH Manchester
- Agency: Daly, Crowley, Mofford & Durkee, LLP
- Main IPC: G01R33/09
- IPC: G01R33/09 ; H01F10/32 ; H01L27/22 ; H01L43/02 ; H01L43/08 ; H01L43/10 ; B82Y25/00
Abstract:
In one aspect, a dual tunnel magnetoresistance (TMR) element structure includes a first TMR element and a second TMR element. The TMR element structure also includes a conducting layer that is disposed between the first TMR element and the second TMR element and is in direct contact with the first TMR element and the second TMR element.
Public/Granted literature
- US20210066391A1 DUAL TUNNEL MAGNETORESISTANCE (TMR) ELEMENT STRUCTURE Public/Granted day:2021-03-04
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