Invention Grant
- Patent Title: Method of manufacturing active matrix substrate
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Application No.: US16833286Application Date: 2020-03-27
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Publication No.: US11217610B2Publication Date: 2022-01-04
- Inventor: Atsushi Hachiya , Hiroaki Furukawa , Kazuya Tsujino
- Applicant: SHARP KABUSHIKI KAISHA
- Applicant Address: JP Sakai
- Assignee: SHARP KABUSHIKI KAISHA
- Current Assignee: SHARP KABUSHIKI KAISHA
- Current Assignee Address: JP Sakai
- Agency: ScienBiziP, P.C.
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/786 ; G02B26/00

Abstract:
An active matrix substrate includes: a first substrate; and first electrodes, a dielectric layer covering the first electrodes, and a first water-repelling layer in this sequence on the first substrate, wherein the dielectric layer has a multilayer structure including two or more layers and includes a silicon nitride film and a metal-oxide film between the silicon nitride film and the first water-repelling layer, and the silicon nitride film has an oxygen-containing surface layer region on a surface thereof that is in contact with the metal-oxide film.
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