Invention Grant
- Patent Title: Semiconductor device with discrete blocks
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Application No.: US16715488Application Date: 2019-12-16
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Publication No.: US11217562B2Publication Date: 2022-01-04
- Inventor: Ching-Wen Hsiao , Chen-Shien Chen , Wei Sen Chang , Shou-Cheng Hu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L25/065 ; H01L23/64 ; H01L23/00 ; H01L23/538 ; H01L21/48 ; H01L21/56 ; H01L23/522 ; H01L21/683 ; H01L23/31 ; H01L23/48 ; H01L23/528 ; H01L23/50

Abstract:
A semiconductor device and a method of manufacture are provided. In particular, a semiconductor device using blocks, e.g., discrete connection blocks, having through vias and/or integrated passive devices formed therein are provided. Embodiments such as those disclosed herein may be utilized in PoP applications. In an embodiment, the semiconductor device includes a die and a connection block encased in a molding compound. Interconnection layers may be formed on surfaces of the die, the connection block and the molding compound. One or more dies and/or packages may be attached to the interconnection layers.
Information query
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