A semiconductor device structure and a manufacturing method are provided. The semiconductor device structure includes a semiconductor substrate and a dielectric layer over the semiconductor substrate. The semiconductor device structure also includes a conductive trace over the dielectric layer. The semiconductor device structure further includes a conductive feature over the conductive trace, and a width of the conductive feature is substantially equal to or larger than a maximum width of the conductive trace. In addition, the semiconductor device structure includes a conductive bump over the conductive feature.