A method for executing a direct transfer of semiconductor device die from a first substrate to transfer locations on a second substrate. The method includes determining a position of impact wires disposed on a transfer head, semiconductor device die, and transfer locations; determining whether there are at least two positions that an impact wire, a semiconductor device die, and a transfer locations are aligned within a threshold tolerance; and transferring, by the impact wires, the semiconductor device die such that the semiconductor device die detaches from the first substrate and attaches to transfer locations on the second substrate. The transferring being completed based at least in part on determining that the impact wire, the semiconductor device die, and the circuit trace are aligned within the threshold tolerance.