Methods, systems, and devices for techniques for reducing row hammer refresh are described. A memory device may be segmented into regions based on bits (e.g., the least significant bits) of row addresses such that consecutive word lines belong to different regions. A memory device may initiate a refresh operation for a first row of memory cells corresponding to a first word line. The memory device may determine that the first row is an aggressor row of a row hammer attack and may determine an adjacent row associated with a second word line as a victim row that may need to be refreshed (e.g., to counteract potential data corruption due to a row hammer attack). The memory die may determine whether to perform a row-hammer refresh operation on the victim row based on whether the victim row belongs to a region that is masked.