Invention Grant
- Patent Title: Memory circuit and cache circuit configuration
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Application No.: US16587215Application Date: 2019-09-30
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Publication No.: US11216376B2Publication Date: 2022-01-04
- Inventor: Hsien-Hsin Sean Lee , William Wu Shen , Yun-Han Lee
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G11C8/00
- IPC: G11C8/00 ; G06F12/0804 ; G11C5/04 ; G11C5/02 ; G06F12/0891 ; G11C7/22

Abstract:
A memory circuit includes a first memory circuit formed of a first die or a set of stacked dies. The memory circuit further includes a second memory circuit formed of a second die, the second memory circuit comprising one or more sets of memory cells of a second type and each set of the memory cells of the second type comprising multiple cache sections. The first die or the set of stacked dies are stacked over the second die, wherein the second die further includes a first plurality of I/O terminals and a second plurality of I/O terminals, the first plurality of I/O terminals being electrically coupled to the first memory circuit, and the second plurality of I/O terminals being electrically isolated from the first memory circuit.
Public/Granted literature
- US20200026648A1 Memory Circuit and Cache Circuit Configuration Public/Granted day:2020-01-23
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