Invention Grant
- Patent Title: Semiconductor device and power conversion system
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Application No.: US16473236Application Date: 2017-02-28
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Publication No.: US11139808B2Publication Date: 2021-10-05
- Inventor: Kentaro Yoshida , Kazuaki Hiyama
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2017/007708 WO 20170228
- International Announcement: WO2018/158807 WO 20180907
- Main IPC: H03K17/0812
- IPC: H03K17/0812 ; H02M1/32 ; H02M7/5387 ; H02P27/08

Abstract:
To suppress a malfunction of an overcurrent protection circuit caused by rise of a sense voltage in a mirror period immediately after turn-off of a semiconductor switching element. A semiconductor device includes: a semiconductor switching element; a sense resistor; an overcurrent protection circuit which outputs a control signal for controlling on-drive and off-drive of the semiconductor switching element based on whether a sense voltage exceeds a threshold value; and a diode which clamps the sense voltage. When the sense voltage exceeds the threshold value, the overcurrent protection circuit outputs a signal for off-driving the semiconductor switching element as the control signal.
Information query
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