Invention Grant
- Patent Title: Semiconductor device, power conversion apparatus, and vehicle
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Application No.: US15431001Application Date: 2017-02-13
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Publication No.: US11139753B2Publication Date: 2021-10-05
- Inventor: Kentaro Ikeda , Kazuto Takao
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JPJP2016-112793 20160606
- Main IPC: H02M7/5387
- IPC: H02M7/5387 ; B60L50/51 ; H02M1/08 ; H01L23/00 ; H02M1/00 ; H02P27/06

Abstract:
A semiconductor device according to an embodiment includes: a first transistor having a first electrode, a second electrode, and a first control electrode, the first transistor performing a switching operation; a second transistor having a third electrode electrically connected to the second electrode, a fourth electrode, and a second control electrode, the second transistor performing an analog operation; and a third transistor having a fifth electrode electrically connected to the fourth electrode, a sixth electrode, and a third control electrode.
Public/Granted literature
- US20170353128A1 SEMICONDUCTOR DEVICE, POWER CONVERSION APPARATUS, AND VEHICLE Public/Granted day:2017-12-07
Information query
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