Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16860775Application Date: 2020-04-28
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Publication No.: US11139749B2Publication Date: 2021-10-05
- Inventor: Toshihiro Miyazaki
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JPJP2019-116803 20190624
- Main IPC: H02M7/145
- IPC: H02M7/145 ; H02M7/155 ; H02M1/08 ; H02M1/32 ; H02M1/42

Abstract:
A semiconductor device includes a rectifier circuit that rectifies an AC input voltage, a zero-cross detection circuit that detects a zero-cross of the AC input voltage, a control circuit that turns on the rectifier circuit at a timing determined by the zero-cross detected by the zero-cross detection circuit and a predetermined phase angle, and the phase angle is set so that an output voltage of the rectifier circuit is gradually increased.
Information query
IPC分类: